Datasheet Fairchild J271 — Даташит

J271 J271
P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88. 1 TO-92 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 30 50 -55 ~ 150 Units V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG = 1.0µA, VDS = 0 VGS = 20V, VDS = 0 VDS = -15V, ID = 1.0nA VDS = -15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz 1.5 -6 8000 Min. 30 200 4.5 -50 18000 200 Max. Units V pA V mA µmhos µmhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current * Forward Transferconductance Common-Source Output Conductance On Characteristics Small Signal Characteristics Thermal Characteristics Ta=25°C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, February 2004 J271 Package Dimensions TO-92
4.58 ­0.15
+0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60
±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 ­0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation Rev. A, February 2004 TRADEMARKS
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